NZT6717 查看數據表（PDF） - Fairchild Semiconductor

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NZT6717

NPN General Purpose Amplifier

Fairchild Semiconductor 

NPN General Purpose Amplifier

(continued)

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

V(BR)CBO

Collector-Emitter Breakdown

Voltage*

Collector-Base Breakdown Voltage

V(BR)EBO

Emitter-Base Breakdown Voltage

ICBO

Collector-Cutoff Current

IEBO

Emitter-Cutoff Current

IC = 10 mA, IB = 0

IC = 100 µA, IE = 0

IE = 100 µA, IC = 0

VCB = 60 V, IE = 0

VEB = 5.0 V, IC = 0

80

V

80

V

5.0

V

0.1

µA

0.1

µA

ON CHARACTERISTICS*

hFE

DC Current Gain

VCE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

IC = 50 mA, VCE = 1.0 V

IC = 250 mA, VCE = 1.0 V

IC = 500 mA, VCE = 1.0 V

IC = 250 mA, IB = 10 mA

IC = 250 mA, VCE = 1.0 V

80

50

250

20

0.35

V

1.2

V

SMALL SIGNAL CHARACTERISTICS

hfe

Small-Signal Current Gain

Ccb

Collector-Base Capacitance

IC = 200 mA, VCE = 5.0 V,

f = 20 MHz

2.5

25

VCB = 10 V, IE = 0, f = 1.0 MHz

30

pF

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 1.0%

3

Typical Characteristics

Typical Pulsed Current Gain

vs Collector Current

3 00

2 50

125 °C

V CE = 5V

2 00

25 °C

1 50

1 00

- 40 °C

50

0

0.0 01

0 .01

0.1

I C - COLLECTOR CURRENT (A)

1 1.5

Collector-Emitter Saturation

Voltage vs Collector Current

0.5

0.4 β = 10

0.3

0.2

0.1

0

0.01

25 °C

125 °C

- 40 °C

0.1

1

I C - COLLE CTOR CURRENT (A)

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