NZT6717 查看數據表（PDF） - Fairchild Semiconductor
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NZT6717 Datasheet PDF : 12 Pages
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Typical Characteristics (continued)
NPN General Purpose Amplifier
(continued)
Base-Emitter Saturation
Voltage vs Collector Current
1.2
β = 10
1
0.8
- 40 °C
0.6
25 °C
125 °C
0.4
0.2
1
10
100
I C - COLLECTOR CURRENT ( mA)
1000
Collector-Cutoff Current
vs Ambient Temperature
100
VCB = 80V
10
1
0.1
25
50
75
100
125
150
T A - AMBIENT TEMPE RATURE (°C)
Gain Bandwidth Product
vs Collector Current
500
V CE = 10V
400
300
200
100
0
1
10
100
1000
I C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
1
- 40 °C
0.8
25 °C
0.6
125 °C
0.4
VCE = 5V
0.2
0.001
0.01
0.1
1
I C - COLLE CTOR CURRENT (A)
Collector-Base Capacitance
vs Collector-Base Voltage
40
f = 1 MHz
30
20
10
0
0
4
8
12
16
20
24
28
V CB- COLLECTOR-BASE VOLTAGE (V)
Safe Operating Area TO-226 / SOT-223
10
1
DC T
100 µS*
10 µS*
0.1
*PULSED
OPERATION
DC
TCAOML LBEIECNTTO R=L2E5A°DC =
25
1.0
°C
ms*
T A = 25 °C
0.01
1
LIMIT DETERMINED
BY BV CEO
10
100
V CE- COLLECTOR-EMITTER VOLTAGE (V)
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