UPA836TF 查看數據表（PDF） - NEC => Renesas Technology

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UPA836TF

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

NEC => Renesas Technology 

µPA836TF

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

PARAMETER

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current

Total power dissipation

Junction temperature

Storage temperature

SYMBOL

VCBO

VCEO

VEBO

IC

PT

Tj

Tstg

RATING

Q1

Q2

9

9

6

6

2

2

30

100

150 in 1 element

150 in 1 element

200 in 2 elementsNote

150

150

−65 to +150

UNIT

V

V

V

mA

mW

°C

°C

Note 110 mW must not be exceeded for 1 element.

(1) Q1

ELECTRICAL CHARACTERISTICS

PARAMETER

Collector cutoff current

Emitter cutoff current

DC current gain

Gain bandwidth product

Feedback capacitance

Insertion power gain

Noise figure

SYMBOL

ICBO

IEBO

hFE

fT

Cre

|S21e|2

NF

CONDITION

VCB = 5 V, IE = 0

VEB = 1 V, IC = 0

VCE = 3 V, IC = 10 mANote 1

VCE = 3 V, IC = 10 mA, f = 2 GHz

VCB = 3 V, IE = 0, f = 1 MHzNote 2

VCE = 3 V, IC = 10 mA, f = 2 GHz

VCE = 3 V, IC = 3 mA, f = 2 GHz

MIN.

75

7

TYP.

12

0.4

8.5

1.5

MAX.

0.1

0.1

150

0.7

2.5

UNIT

µA

µA

GHz

pF

dB

dB

Notes 1. Pulse measurement: PW ≤ 350 µs, Duty cycle ≤ 2%

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge

method), with emitter connected to guard pin of capacitance meter.

2

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