1PS70SB82 查看數據表（PDF） - Philips Electronics
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1PS70SB82 Datasheet PDF : 8 Pages
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Philips Semiconductors
Schottky barrier (double) diodes
Product specification
1PS70SB82; 1PS70SB84;
1PS70SB85; 1PS70SB86
103
handbook, halfpage
IF
(mA)
102
MGT835
(1)
(2) (3)
10
(2)
(1)
(3)
1
0
0.4
0.8
1.2 VF (V) 1.6
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.6 Forward current as a function of forward
voltage; typical values.
103
handbook, halfpage
IR
(µA)
102
(1)
10
(2)
1
MGT836
10−1
(3)
10−2
0
5
10 VR (V) 15
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
handbook, h1alfpage
Cd
(pF)
0.8
MGT837
103
handbook, halfpage
rD
(Ω)
102
MGT838
0.6
10
0.4
0
2
4
6
8
10
VR (V)
1
10−1
1
10 IF (mA) 102
f = 1 MHz; Tamb = 25 °C.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tamb = 25 °C.
Fig.9 Differential diode forward resistance as a
function of forward current; typical values.
2001 Jan 18
4
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