IKW40N120T2 查看數據表（PDF） - Infineon Technologies

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IKW40N120T2

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode

Infineon Technologies 

IKW40N120T2

TrenchStop® 2nd Generation Series

Dynamic Characteristic

Input capacitance

Ciss

VCE=25V,

-

2360

- pF

Output capacitance

Coss

VGE=0V,

-

230

-

Reverse transfer capacitance

Crss

f=1MHz

-

125

-

Gate charge

QGate

VCC=960V, IC=40A

-

192

- nC

VGE=15V

Internal emitter inductance

LE

-

13

- nH

measured 5mm (0.197 in.) from case

Short circuit collector current1)

IC(SC)

VGE=15V,tSC10s

-

-A

VCC = 600V,

Tj,start = 25C

220

Tj.start = 175C

156

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter

Symbol

Conditions

IGBT Characteristic

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Turn-on energy

Turn-off energy

Total switching energy

Anti-Parallel Diode Characteristic

Diode reverse recovery time

Diode reverse recovery charge

Diode peak reverse recovery current

Diode peak rate of fall of reverse

recovery current during t b

td(on)

tr

td(off)

tf

Eon

Eoff

Ets

trr

Qrr

Irrm

dirr/dt

Tj=25C,

VCC=600V,IC=40A,

VGE=0/15V,

RG=12,

L2)=80nH,

C2)=67pF

Energy losses include

“tail” and diode reverse

recovery.

Tj=25C,

VR=600V, IF=40A,

diF/dt=950A/s

min.

-

-

-

-

-

-

-

-

-

-

-

Value

typ.

33

28

314

94

3.2

2.05

5.25

285

3.3

23

350

Unit

max.

- ns

-

-

-

- mJ

-

-

- ns

µC

A

- A/s

1) Allowed number of short circuits: <1000; time between short circuits: >1s.

2) Leakage inductance L  a n d Stray capacity C  due to dynamic test circuit in Figure E.

IFAG IPC TD VLS

3

Rev. 2.4 23.09.2014

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