IKW40N120T2 查看數據表（PDF） - Infineon Technologies

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IKW40N120T2

Low Loss DuoPack : IGBT in 2nd generation TrenchStop® with soft, fast recovery anti-parallel Emitter Controlled Diode

Infineon Technologies 

IKW40N120T2

TrenchStop® 2nd Generation Series

150A

125A

100A

20V

VGE=17V

15V

13V

11V

75A

9V

7V

50A

150A

125A

100A

20V

VGE=17V

15V

13V

11V

75A

9V

7V

50A

25A

25A

0A

0V

1V

2V

3V

4V

5V

0A

0V

1V

2V

3V

4V

5V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic

(Tj = 25°C)

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristic

(Tj = 175°C)

140A

120A

100A

80A

60A

40A

20A

0A

0V

TJ=175°C

25°C

2V 4V 6V

8V 10V 12V

Figure 7.

VGE, GATE-EMITTER VOLTAGE

Typical transfer characteristic

(VCE=20V)

3.5V

3.0V

I =80A

C

2.5V

2.0V

1.5V

1.0V

0.5V

I =40A

C

I =20A

C

I =8A

C

0.0V

-50°C

0°C

50°C 100°C 150°C

Figure 8.

TJ, JUNCTION TEMPERATURE

Typical collector-emitter saturation

voltage as a function of junction

temperature

(VGE = 15V)

IFAG IPC TD VLS

6

Rev. 2.4 23.09.2014

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