28C256 查看數據表（PDF） - Atmel Corporation
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28C256 Datasheet PDF : 14 Pages
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Device Operation (Continued)
DEVICE IDENTIFICATION: A n e x t r a 6 4 - b y t e s o f
E2PROM memory are available to the user for device
identification. By raising A9 to 12V ± 0.5V and using ad-
dress locations 7FC0H to 7FFFH the additional bytes may
be written to or read from in the same manner as the regu-
lar memory array.
OPTIONAL CHIP ERASE MODE: The entire device can
be erased using a 6-byte software code. Please see Soft-
ware Chip Erase application note for details.
DC and AC Operating Range
Operating
Temperature (Case)
VCC Power Supply
Com.
Ind.
Mil.
AT28C256-15
0°C - 70°C
-40°C - 85°C
-55°C - 125°C
5V ± 10%
AT28C256-20
0°C - 70°C
-40°C - 85°C
-55°C - 125°C
5V ± 10%
AT28C256-25
0°C - 70°C
-40°C - 85°C
-55°C - 125°C
5V ± 10%
AT28C256-35
-55°C - 125°C
5V ± 10%
Operating Modes
Mode
CE
Read
VIL
Write (2)
VIL
Standby/Write Inhibit
VIH
Write Inhibit
X
Write Inhibit
X
Output Disable
X
Chip Erase
VIL
Notes: 1. X can be VIL or VIH.
2. Refer to AC Programming Waveforms.
OE
WE
VIL
VIH
VIH
VIL
X (1)
X
X
VIH
VIL
X
VIH
X
VH (3)
VIL
3. VH = 12.0V ± 0.5V.
DC Characteristics
Symbol
ILI
ILO
Parameter
Input Load Current
Output Leakage Current
ISB1
VCC Standby Current CMOS
ISB2
VCC Standby Current TTL
ICC
VCC Active Current
VIL
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
Condition
VIN = 0V to VCC + 1V
VI/O = 0V to VCC
CE = VCC - 0.3V to VCC + 1V
CE = 2.0V to VCC + 1V
f = 5 MHz; IOUT = 0 mA
Com., Ind.
Mil.
IOL = 2.1 mA
IOH = -400 µA
I/O
DOUT
DIN
High Z
High Z
High Z
Min Max Units
10
µA
10
µA
200
µA
300
µA
3
mA
50
mA
0.8
V
2.0
V
.45
V
2.4
V
2-220
AT28C256
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