MW7IC18100GNR1 查看數據表（PDF） - Freescale Semiconductor

零件编号

产品描述 (功能)

生产厂家

MW7IC18100GNR1

1990 MHz, 100 W, 28 V GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS

Freescale Semiconductor 

f = 2040 MHz

Zload

f = 1880 MHz

Zo = 50 Ω

Zin

f = 2040 MHz

f = 1880 MHz

VDD1 = VDD2 = 28 Vdc, IDQ1 = 180 mA, IDQ2 = 1000 mA, Pout = 100 W CW

f

Zin

MHz

W

Zload

W

1880

67.48 - j17.89

2.324 - j3.239

1900

60.03 - j20.86

2.234 - j3.105

1920

53.65 - j21.94

2.135 - j2.965

1940

48.13 - j21.94

2.037 - j2.818

1960

43.52 - j21.22

1.936 - j2.666

1980

39.60 - j20.00

1.851 - j2.509

2000

36.14 - j18.52

1.765 - j2.355

2020

33.19 - j16.57

1.669 - j2.193

2040

30.96 - j14.58

1.559 - j2.012

Zin = Device input impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Device

Under Test

Output

Matching

Network

Z in

Z load

Figure 25. Series Equivalent Input and Load Impedance — 1900 MHz

RF Device Data

Freescale Semiconductor

MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1

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