AD8104 查看數據表（PDF） - Analog Devices

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AD8104

600 MHz, 32 × 16 Buffered Analog Crosspoint Switch

Analog Devices 

ABSOLUTE MAXIMUM RATINGS

Table 6.

Parameter

Analog Supply Voltage

(VPOS – VNEG)

Digital Supply Voltage

(VDD – DGND)

Ground Potential Difference

(VNEG – DGND)

Maximum Potential Difference

(VDD – VNEG)

Common-Mode Analog Input

Voltage

Differential Analog Input Voltage

Digital Input Voltage

Output Voltage

(Disabled Analog Output)

Output Short-Circuit Duration

Output Short-Circuit Current

Storage Temperature Range

Operating Temperature Range

Lead Temperature

(Soldering, 10 sec)

Junction Temperature

Rating

6V

6V

+0.5 V to −2.5 V

8V

VNEG to VPOS

±2 V

VDD

(VPOS − 1 V) to (VNEG + 1 V)

Momentary

80 mA

−65°C to +125°C

−40°C to +85°C

300°C

150°C

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

THERMAL RESISTANCE

θJA is specified for the worst-case conditions, that is, a device

soldered in a circuit board for surface-mount packages.

Table 7. Thermal Resistance

Package Type

θJA θJC θJB

ψJT

ψJB Unit

304-Ball BGA

14 1 6.5 0.6 5.7 °C/W

AD8104/AD8105

POWER DISSIPATION

The AD8104/AD8105 are operated with ±2.5 V or +5 V

supplies and can drive loads down to 100 Ω, resulting in a large

range of possible power dissipations. For this reason, extra care

must be taken derating the operating conditions based on

ambient temperature.

Packaged in a 304-ball BGA, the AD8104/AD8105 junction-to-

ambient thermal impedance (θJA) is 14°C/W. For long-term

reliability, the maximum allowed junction temperature of the

die should not exceed 150°C. Temporarily exceeding this limit

may cause a shift in parametric performance due to a change in

stresses exerted on the die by the package. Exceeding a junction

temperature of 175°C for an extended period can result in

device failure. The following curve shows the range of allowed

internal die power dissipations that meet these conditions over

the −40°C to +85°C ambient temperature range. When using

Table 6, do not include external load power in the maximum

power calculation, but do include load current dropped on the

die output transistors.

8

TJ = 150°C

7

6

5

4

15

25

35

45

55

65

75

85

AMBIENT TEMPERATURE (°C)

Figure 4. Maximum Die Power Dissipation vs. Ambient Temperature

ESD CAUTION

Rev. 0 | Page 7 of 36

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