AP03N70P-A 查看數據表（PDF） - Advanced Power Technology
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AP03N70P-A Datasheet PDF : 6 Pages
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AP03N70P
16
14 I D =3.3A
V DS =480V
12
10
8
6
4
2
0
0
2
4
6
8
10
12
14
16
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
f=1.0MHz
10000
Ciss
100
Coss
Crss
1
1
5
9
13
17
21
25
29
V DS (V)
Fig 10. Typical Capacitance Characteristics
100
10
T j = 150 o C
1
T j = 25 o C
0.1
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
5
4
3
2
1
0
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
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