28F016XD-85 查看數據表（PDF） - Intel

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28F016XD-85

16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY

Intel 

28F016XD FLASH MEMORY

E

5.4 DC Characteristics

VCC = 3.3V ± 0.3V, TA = 0°C to +70°C

3/5# = Pin Set High for 3.3V Operations

Sym

Parameter

Notes Min Typ Max Unit

Test Condition

ICC1 VCC Word Read

Current

1,4,5

ICC2 VCC Standby Current

1,5

ICC3 VCC RAS#-Only

1,5

Refresh Current

ICC4 VCC Fast Page Mode

Word Read Current

1,4,5

ICC5 VCC Standby Current

1,5

ICC6 VCC CAS#-before-

1,5

RAS# Refresh Current

50

70 mA VCC = VCC Max

RAS#, CAS# = VIL

RAS#, CAS#, Addr. Cycling @

tRC = min

IOUT = 0 mA

Inputs = TTL or CMOS

1

4

mA VCC = VCC Max

RAS#, CAS#, RP# = VIH

WP#, 3/5# = VIL or VIH

50

80

mA VCC = VCC Max

CAS# = VIH

RAS# = VIL

RAS#, Addr. Cycling @

tRC = min

Inputs = TTL or CMOS

40

70

mA VCC = VCC Max

RAS#, CAS# = VIL

CAS#, Addr. Cycling @

tPC = min

IOUT = 0 mA

Inputs = VIL or VIH

70 130 µA VCC = VCC Max

RAS# CAS# RP# = VCC ± 0.2V

WP#, 3/5# = VCC ± 0.2V or

GND ± 0.2V

40

15

mA VCC = VCC Max

CAS#, RAS# = VIL

CAS#, RAS#, Addr. Cycling @

tRC = min

Inputs = TTL or CMOS

ICC7 VCC Standby Current

1,5

(Self Refresh Mode)

ILI

Input Load Current

1

ILO Output Leakage

1

Current

ICCD VCC Deep Power-

1

Down Current

40

10

mA VCC = VCC Max

RAS#, CAS# = VIL

IOUT = 0 mA

Inputs = VIL or VIH

± 1 µA VCC = VCC Max

VIN = VCC or GND

± 10 µA VCC = VCC Max

VOUT = VCC or GND

2

10 µA RP# = GND ± 0.2V

22

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