E
28F016XD FLASH MEMORY
5.5 DC Characteristics
VCC = 5.0V ± 0.5V, TA = 0°C to +70°C
3/5# = Pin Set Low for 5.0V Operations
Sym
Parameter
Notes Min Typ Max Unit
Test Condition
ICC1 VCC Word Read
Current
1,4,5
ICC2 VCC Standby Current
1,5
ICC3 VCC RAS#-Only
1,5
Refresh Current
ICC4 VCC Fast Page Mode
Word Read Current
1,4,5
ICC5 VCC Standby Current
1,5
90 120 mA VCC = VCC Max
RAS#, CAS# = VIL
RAS#, CAS#, Addr. Cycling @
tRC = min
IOUT = 0 mA
Inputs = TTL or CMOS
2
4
mA VCC = VCC Max
RAS#, CAS#, RP# = VIH
WP#, 3/5# = VIL or VIH
90 145 mA VCC = VCC Max
CAS# = VIH
RAS# = VIL
RAS#, Addr. Cycling @
tRC = min
Inputs = TTL or CMOS
80 130 mA VCC = VCC Max
RAS#, CAS# = VIL
CAS#, Addr. Cycling @
tPC = min
IOUT = 0 mA
Inputs = VIL or VIH
70 130 µA VCC = VCC Max
RAS#,CAS#,RP# = VCC ± 0.2V
WP#, 3/5# = VCC ± 0.2V or
GND ± 0.2V
ICC6 VCC CAS#-before-
1,5
RAS# Refresh Current
ICC7 VCC Standby Current
1,5
(Self Refresh Mode)
ILI
Input Load Current
1
ILO Output Leakage
1
Current
ICCD VCC Deep Power-Down 1
Current
50
15 mA VCC = VCC Max
CAS#, RAS# = VIL
CAS#, RAS#, Addr. Cycling @
tRC = min
Inputs = TTL or CMOS
50
10 mA VCC = VCC Max
RAS#, CAS# = VIL
IOUT = 0 mA
Inputs = VIL or VIH
± 1 µA VCC = VCC Max
VIN = VCC or GND
± 10
µA VCC = VCC Max
VOUT = VCC or GND
2
10 µA RP# = GND ± 0.2V
25