2SA1116 查看數據表（PDF） - Inchange Semiconductor

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2SA1116

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

2SA1116

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -200V(Min.)

·High Power Dissipation

·Complement to Type 2SC2607

APPLICATIONS

·Designed for general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

-200

V

VCEO Collector-Emitter Voltage

VEBO Emitter-Base Voltage

IC

Collector Current-Continuous

IB

Base Current-Continuous

Collector Power Dissipation

PC

@TC=25℃

Tj

Junction Temperature

Tstg

Storage Temperature

-200

V

-6

V

-15

A

-5

A

150

W

150

℃

-65~150 ℃

isc Website：www.iscsemi.cn

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