2SA1314 查看數據表（PDF） - Toshiba
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2SA1314 Datasheet PDF : 4 Pages
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IC – VCE
−4
−100
−50
Common emitter
−30
Ta = 25°C
−3
−10
−2
−5
−3
−1
−2
IB = −1 mA
0
0
0
−0.8
−1.6
−2.4
Collector-emitter voltage VCE (V)
2000
1000
500
Ta = 100°C
25
−25
hFE – IC
Common emitter
VCE = −1 V
100
50
30
−0.01 −0.03 −0.1 −0.3
−1
−3
−10
Collector current IC (A)
2SA1314
IC – VBE
−4
Common emitter
VCE = −1 V
−3
−2
−1
Ta =100°C 25 −25
0
0
−0.4
−0.8
−1.2
−1.6
−2.0
Base-emitter voltage VBE (V)
−1
Common emitter
−0.5 IC/IB =40
−0.3
VCE (sat) – IC
−0.1
−0.05
−0.03
Ta = 100°C
25
−25
−0.01
−0.01 −0.03 −0.1 −0.3
−1
−3
−10
Collector current IC (A)
1.2
(1)
1.0
0.8
PC – Ta
(1) Mounted on a ceramic
2
substrate (250 mm × 0.8 t)
(2) No heat sink
0.6
(2)
0.4
0.2
0
0 20 40 60 80 100 120 140 160
Ambient temperature Ta (°C)
Safe Operating Area
−10
−5 IC max (pulse)*
−3
IC max (continuous)
10 ms*
100 ms*
−1
DC operation
−0.5 Ta = 25°C
−0.3
*: Single no repetitive pulse
Ta = 25°C
−0.1 Curves must be derated
linearly with increase in
−0.05 temperature.
−0.03
Tested without a substrate. VCEO max
−0.1
−0.3
−1
−3
−10
−30
Collector-emitter voltage VCE (V)
3
2006-11-09
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