HFA3524 查看數據表（PDF） - Intersil
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HFA3524 Datasheet PDF : 15 Pages
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HFA3524
Charge Pump Specifications VCC = 3.0V, VP = 3.0V, -40oC < TA < 85oC, Unless Otherwise Specified
HFA3524
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX
Charge Pump Output Current
IDO-SOURCE VDO = VP/2, ICPO = HIGH (Note 4)
-
-5.0
-
IDO-SINK
VDO = VP/2, ICPO = HIGH (Note 4)
-
5.0
-
IDO-SOURCE VDO = VP/2, ICPO = LOW (Note 4)
-
-1.25
-
IDO-SINK
VDO = VP/2, ICPO = LOW (Note 4)
-
1.25
-
Charge Pump High Z State Current
IDO-HIGH Z
0.5V ≤ VDO ≤ VP - 0.5, -40oC < T < 85oC -2.5
-
2.5
CP Sink vs Source Mismatch (Note 5) IDO-SINK vs IDO- VDO = VP/2, TA = 25oC
-
3
10
SOURCE
CP Current vs Voltage (Note 6)
IDO vs VDO 0.5V ≤ VDO ≤ VP - 0.5, T < 25oC
-
10
15
CP Current vs Temperature (Note 7)
IDO vs T
VDO = VP/2, -40oC < T < 85oC
-
10
-
NOTES:
4. See Programmable Modes for ICPO description.
5. IDO vs VDO = Charge Pump Output Current magnitude variation vs Voltage =
[1/2 •{|I1| - |I3|}]/[1/2 • {|I1| + |I3|}] • 100% and [1/2 • |I4| - |I6|]/[1/2 • {|I4| + |I6|}] • 100%.
6. IDO-SINK vs IDO-SOURCE = Charge Pump Output Current Sink vs Source Mismatch = [|I2| - |I5|]/[1/2 • {|I2| + |I5|}] • 100%.
7. IDO vs TA = Charge Pump Output Current magnitude variation vs Temperature =
[|I2 at temp| - |I2 at 25oC|]/|I2 at 25oC| • 100% and [|I5 at temp| - |I5 at 25oC|]/|I5 at 25oC| • 100%.
UNITS
mA
mA
mA
mA
nA
%
%
%
I3
I2
I1
VOLTAGE
OFFSET ∆V
I4
I5
I6
I1 = CP sink current at VDO = VP - ∆V
I2 = CP sink current at VDO = VP/2
I3 = CP sink current at VDO = ∆V
I4 = CP source current at VDO = VP - ∆V
I5 = CP source current at VDO = VP/2
0
∆V
VP/2
DO VOLTAGE
I6 = CP source current at VDO = ∆V
FIGURE 1. CHARGE PUMP CURRENT SPECIFICATION DEFINITIONS
∆V
VP-∆V VP
PC
PARALLEL
PORT
HP5385A IN
FREQUENCY
COUNTER
CLOCK
DATA
LE
FC
FOLD
12K
39K
2.2µF 100pF
fIN 0Ω 100pF
VCC
VP 0.01µF
OSCIN
51
100pF 2.2µF
2.7V
5.0V
FIGURE 2. RF SENSITIVITY TEST BLOCK DIAGRAM
13dB
ATTN
RF 50Ω
SMHU 835.8011.52
SIGNAL GENERATOR
10MHz EXT REF OUT
6
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