2SC5458 查看數據表（PDF） - Toshiba
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2SC5458 Datasheet PDF : 5 Pages
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1000
800
Common emitter
Tc = 25°C
100
IC – VCE
600
400
200
80
60
40
30
20
10
IB = 5 mA
0
0
2
4
6
8
10
Collector-emitter voltage VCE (V)
1000
Common emitter
VCE = 5 V
300
IC – VBE
100
30
10
3
Tc = 100°C
25 −55
1
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage VBE (V)
2SC5458
hFE – IC
300
100
Tc = 100°C
30
25
−55
10
3 Common emitter
VCE = 5 V
1
1
3
10
30
100 300
Collector current IC (mA)
1000
800
Common emitter
VCE = 5 V
600
IC – VBE
400
200
Tc = 100°C
25 −55
0
0
0.2
0.4
0.6
0.8
1.0
1.2
Base-emitter voltage VBE (V)
10
3
1
0.3
0.1
0.05
1
VBE (sat) – IC
Common emitter
IC/IB = 10
25
−55
Tc = 100°C
3
10
30
100
300
Collector current IC (mA)
1000
10
3
1
0.3
0.1
0.05
1
VBE (sat) – IC
Common emitter
IC/IB = 5
25
−55
Tc = 100°C
3
10
30
100
300
Collector current IC (mA)
1000
3
2010-02-05
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