2SK3070 查看數據表（PDF） - Hitachi -> Renesas Electronics

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产品描述 (功能)

生产厂家

2SK3070

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK3070(L),2SK3070(S)

Silicon N Channel MOS FET

High Speed Power Switching

Features

• Low on-resistance

RDS(on) = 4.5 mΩ typ.

• Low drive current

• 4 V gate drive device can be driven from 5 V source

Outline

ADE-208-684G (Z)

8th. Edition

February 1999

LDPAK

D

G

S

4

4

1

2

3

1

2

3

1. Gate

2. Drain

3. Source

4. Drain

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