2SK3076 查看數據表（PDF） - Hitachi -> Renesas Electronics

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2SK3076

Silicon N Channel MOS FET High Speed Power Switching

Hitachi -> Renesas Electronics 

2SK3076(L),2SK3076(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Drain to source voltage

VDSS

Gate to source voltage

VGSS

Drain current

ID

Drain peak current

I Note1

D(pulse)

Body-drain diode reverse drain current IDR

Channel dissipation

Pch Note2

Channel temperature

Tch

Storage temperature

Tstg

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2. Value at Tc = 25°C

Ratings

Unit

500

V

±30

V

7

A

28

A

7

A

60

W

150

°C

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol Min

Drain to source breakdown voltage V(BR)DSS 500

Gate to source breakdown voltage V(BR)GSS ±30

Gate to source leak current

I GSS

—

Zero gate voltege drain current IDSS

—

Gate to source cutoff voltage

VGS(off)

2.0

Static drain to source on state

RDS(on)

—

resistance

Forward transfer admittance

Input capacitance

|yfs|

3.5

Ciss —

Output capacitance

Coss —

Reverse transfer capacitance

Crss —

Turn-on delay time

t d(on)

—

Rise time

tr

—

Turn-off delay time

t d(off)

—

Fall time

tf

—

Body–drain diode forward voltage VDF

—

Body–drain diode reverse

recovery time

t rr

—

Note: 4. Pulse test

Typ Max Unit Test Conditions

—

—

V

ID = 10mA, VGS = 0

—

—

V

IG = ±100µA, VDS = 0

—

±10 µA

VGS = ±25V, VDS = 0

—

250 µA

VDS = 400 V, VGS = 0

—

3.0 V

ID = 1mA, VDS = 10V

0.7 0.9 Ω

ID = 4A, VGS = 10VNote4

6.0 —

S

ID = 4A, VDS = 10V Note4

1100 —

pF

VDS = 10V

310 —

pF

VGS = 0

50

—

pF

f = 1MHz

15

—

ns

ID =4A, VGS = 10V

55

—

ns

RL = 7.5Ω

100 —

ns

48

—

ns

0.9 —

V

IF = 7A, VGS = 0

120 —

ns

IF = 7A, VGS = 0

diF/ dt =100A/µs

2

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