2SK3076 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SK3076 Datasheet PDF : 9 Pages
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2SK3076(L),2SK3076(S)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
10
Pulse Test
8
10 A
6
4
5A
2
ID=2A
0
4
8
12 16 20
Gate to Source Voltage V GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
5
Pulse Test
2
VGS = 10 V
1
15 V
0.5
0.2
0.1
0.05
0.5 1 2
5 10 20 50
Drain Current I D (A)
Static Drain to Source on State Resistance
vs. Temperature
2.0
V GS = 10 V
Pulse Test
1.6
I D = 10 A
1.2
0.8
2, 5 A
0.4
0
–40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
500
V DS = 20 V
200 Pulse Test
100
Tc = –25 °C
50
25 °C
20
75 °C
10
5
2
1
0.5
0.1 0.2 0.5 1 2
5 10
Drain Current I D (A)
4
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