2SK3076 查看數據表（PDF） - Hitachi -> Renesas Electronics
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2SK3076 Datasheet PDF : 9 Pages
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5000
Body–Drain Diode Reverse
Recovery Time
2000
1000
di / dt = 100 A / µs
VGS = 0, Ta = 25 °C
PulseTest
500
200
100
50
0.2 0.5 1 2
5 10 20
Reverse Drain Current I DR (A)
2SK3076(L),2SK3076(S)
5000
1000
100
Typical Capacitance vs.
Drain to Source Voltage
VGS = 0
Ciss
f = 1 MHz
Coss
Crss
10
5
0
10
20 30 40
50
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics
500
20
ID=7A
VDD = 100 V
400
250 V
16
400 V
VDS
300
12
VGS
200
8
100
0
VDD = 400 V
4
250 V
100 V
0
8
16 24 32 40
Gate Charge Qg (nc)
Switching Characteristics
500
200
100
50
20
10
5
0.2
t d(off)
tf
tr
t d(on)
VGS = 10 V, V DD = 30 V
PW = 2 µs, duty < 1 %
0.5 1 2
5 10 20
Drain Current I D (A)
5
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