PCF85116-3T/01 查看數據表（PDF） - Philips Electronics
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PCF85116-3T/01 Datasheet PDF : 21 Pages
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Philips Semiconductors
PCF85116-3
2048 × 8-bit CMOS EEPROM with I2C-bus interface
10. Characteristics
Table 7: Characteristics
VDD = 2.7 to 3.5 V; VSS = 0 V; Tamb = −40 to +85 °C; unless otherwise specified.
Symbol Parameter
Conditions
Min
Typ
Supplies
VDD
supply voltage
2.7
-
IDDR
IDDW
supply current read
supply current E/W
fSCL = 400 kHz;
VDD = 5.5 V
fSCL = 400 kHz;
VDD = 5.5 V
-
-
-
-
IDD(stb)
standby supply current
VDD = 2.7 V
-
-
VDD = 5.5 V
-
-
SDA input/output (pin 5)
VIL
LOW level input voltage
−0.8
-
VIH
HIGH level input voltage
0.7VDD
-
VOL1
LOW level output voltage
IOL = 3 mA; VDD(min)
-
-
VOL2
IOL = 6 mA; VDD(min)
-
-
ILO
output leakage current
VOH = VDD
-
-
to(f)
output fall time from VIHmin to VILmax
[1]
with up to 3 mA sink current at VOL1
20 + 0.1Cb -
with up to 6 mA sink current at VOL2
20 + 0.1Cb -
tSP
pulse width of spikes suppressed by
filter
0
-
Ci
input capacitance
VI = VSS
-
-
SCL input (pin 6)
VIL
LOW level input voltage
−0.8
-
VIH
HIGH level input voltage
0.7VDD
-
ILI
input leakage current
VI = VDD or VSS
-
-
fSCL
clock input frequency
0
-
tSP
pulse width of spikes suppressed by
filter
0
-
Ci
input capacitance
VI = VSS
-
-
WP input (pin 7)
VIL
LOW level input voltage
−0.8
-
VIH
HIGH level input voltage
0.9VDD
-
Data retention time
tS
data retention time
Tamb = 55 °C
20
-
[1] The bus capacitance ranges from 10 to 400 pF (Cb = total capacitance of one bus line in pF).
Max
5.5
1.0
1.0
6
10
0.3VDD
+6.5
0.4
0.6
1
250
250
100
10
0.3VDD
+6.5
±1
400
100
7
0.1VDD
VDD + 0.8
-
Unit
V
mA
mA
µA
µA
V
V
V
V
µA
ns
ns
ns
pF
V
V
µA
kHz
ns
pF
V
V
years
9397 750 14217
Product data
Rev. 04 — 25 October 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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