ACST12 查看數據表（PDF） - STMicroelectronics
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ACST12 Datasheet PDF : 12 Pages
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ACST12
Characteristics
Table 4. Static characteristics
Symbol
Test conditions
VTM(1)
VT0(1)
Rd(1)
IOUT = 17 A, tp = 500 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VOUT = VDRM/ VRRM
1. For both polarities of OUT pin referenced to COM pin
Table 5.
Symbol
Thermal characteristics
Parameter
Rth(j-c) Junction to case (AC)
Rth(j-a) Junction to ambient
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
MAX.
MAX.
MAX.
MAX.
TO-220AB
D²PAK
TO-220AB
D²PAK with 1cm² of Cu
Value
Unit
1.5
V
0.9
V
30
mΩ
20
µA
1.5
mA
Value
1.5
60
45
Unit
°C/W
°C/W
°C/W
°C/W
Figure 2. Maximum power dissipation vs.
on-state rms current (full cycle)
Figure 3. On-state rms current vs. case
temperature (full cycle)
P(W)
15
14 α=180 °
13
12
11
10
9
8
7
6
5
4
3
2
IT(RMS)(A)
1
0
0 1 2 3 4 5 6 7 8 9 10 11 12
IT(RMS)(A)
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
25
TC(°C)
50
75
100
125
Figure 4.
On-state rms current vs. ambient Figure 5.
temperature (free air convection full
cycle)
Relative variation of thermal
impedance vs. pulse duration
IT(RMS)(A)
3.0
2.5
D2PAK
With 1cm2 of cu
K=[Zth/Rth]
1.0E+00
Z th(j-c)
Zth(j-a)
2.0
TO-220AB
1.5
1.0E-01
1.0
0.5
0.0
0
Tamb(°C)
25
50
tp(s)
1.0E-02
75
100
125
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03
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