12N60C3D 查看數據表（PDF） - Fairchild Semiconductor
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产品描述 (功能)
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12N60C3D
Fairchild Semiconductor
12N60C3D Datasheet PDF : 8 Pages
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HGTP12N60C3D, HGT1S12N60C3DS
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Average Diode Forward Current at 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG)
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC
ALL TYPES
600
24
12
12
96
±20
±30
24A at 600V
104
0.83
-40 to 150
260
4
13
UNITS
V
A
A
A
A
V
V
W
W/oC
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNITS
Collector to Emitter Breakdown Voltage
Collector to Emitter Leakage Current
BVCES
ICES
IC = 250µA, VGE = 0V
VCE = BVCES
Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, VGE = 15V
IC = 15A, VGE = 15V
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
600
-
-
V
-
-
250
µA
-
-
2.0
mA
-
1.65
2.0
V
-
1.85
2.2
V
-
1.80
2.2
V
-
2.0
2.4
V
Gate to Emitter Threshold Voltage
VGE(TH) IC = 250µA, VCE = VGE
3.0
5.0
6.0
V
Gate to Emitter Leakage Current
Switching SOA
IGES
SSOA
VGE = ±20V
TJ = 150oC,
VGE = 15V,
RG = 25Ω,
L = 100µH
-
VCE(PK) = 480V
80
VCE(PK) = 600V
24
-
±100
nA
-
-
A
-
-
A
Gate to Emitter Plateau Voltage
On-State Gate Charge
Current Turn-On Delay Time
Current Rise Time
Current Turn-Off Delay Time
Current Fall Time
Turn-On Energy
Turn-Off Energy (Note 3)
Diode Forward Voltage
VGEP
Qg(ON)
td(ON)I
tri
td(OFF)I
tfi
EON
EOFF
VEC
IC = IC110, VCE = 0.5 BVCES
IC = IC110,
VCE = 0.5 BVCES
TJ = 150oC,
ICE = IC110,
VCE(PK) = 0.8 BVCES,
VGE = 15V,
RG = 25Ω,
L = 100µH
VGE = 15V
VGE = 20V
IEC = 12A
-
7.6
-
V
-
48
55
nC
-
62
71
nC
-
28
-
ns
-
20
-
ns
-
270
400
ns
-
210
275
ns
-
380
-
µJ
-
900
-
µJ
-
1.7
2.1
V
©2001 Fairchild Semiconductor Corporation
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
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