12N60C3D 查看數據表（PDF） - Fairchild Semiconductor
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12N60C3D
Fairchild Semiconductor
12N60C3D Datasheet PDF : 8 Pages
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HGTP12N60C3D, HGT1S12N60C3DS
Typical Performance Curves (Continued)
25
VGE = 15V
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE
TEMPERATURE
20
140
VCE = 360V, RG = 25Ω, TJ = 125oC
120
ISC
15
100
80
10
60
tSC
40
5
20
10
11
12
13
14
15
VGE, GATE TO EMITTER VOLTAGE (V)
FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
100
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
50
30
VGE = 10V
20
VGE = 15V
400
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
300
VGE = 15V
VGE = 10V
200
10
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
100
VGE = 10V
VGE = 15V
100
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 8. TURN OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
300
TJ = 150oC, RG = 25Ω, L = 100µH, VCE(PK) = 480V
200
VGE = 10V OR 15V
10
5
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
©2001 Fairchild Semiconductor Corporation
100
90
80
5
10
15
20
25
30
ICE, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT
HGTP12N60C3D, HGT1S12N60C3DS Rev. B
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