AMMC-6220-W50 查看數據表（PDF） - Avago Technologies
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AMMC-6220-W50 Datasheet PDF : 8 Pages
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AMMC-6220 DC Specifications/Physical Properties [1]
Symbol
Parameters and Test Conditions
Units
Min.
Typ.
Max.
Id
Drain Supply Current
mA
(under any RF power drive and temperature)
(Vd=3.0 V)
55
70
Vg
Gate Supply Operating Voltage
V
NA
(Id(Q) = 800 (mA))
qch-b
Thermal Resistance[2]
°C/W
25
(Backside temperature, Tb = 25°C)
Notes:
1. Ambient operational temperature TA=25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (qch-b) = 26°C/W at Tchannel (Tc) = 34°C as measured using infrared microscopy. Thermal Resistance at
backside temperature (Tb) = 25°C calculated from measured data.
AMMC-6220 RF Specifications [3, 4, 5] (TA= 25°C, Vd=3.0 V, Id(Q)=55 mA, Zo=50 Ω)
Symbol
Gain
NF
P-1dB
OIP3
RLin
RLout
Isol
Parameters and Test Conditions
Small-signal Gain[6]
Noise Figure into 50 W
Output Power at 1dB Gain Compres-
sion
Third Order Intercept Point;
Df=100MHz; Pin=-35dBm
Input Return Loss[6]
Output Return Loss[6]
Reverse Isolation[6]
Units Minimum
dB
21
dB
dBm
dBm
dB
dB
dB
Typical
23
7-10 GHz = 2.1
10-16 GHz = 1.8
16-20 GHz = 2.0
+9
Maximum
8 GHz = 2.4
12 GHz = 2.2
18 GHz = 2.4
+19
-12
-10
-16
-10
-45
Sigma
0.30
0.10
0.87
1.20
0.31
0.68
0.50
Notes:
3. Small/Large -signal data measured in wafer form TA = 25°C.
4. 100% on-wafer RF test is done at frequency = 8, 12, and 18 GHz.
5. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may be improved over a
more narrow bandwidth by application of additional conjugate, linearity, or low noise (Γopt) matching.
6. As derived from measured s-parameters
LSL
USL
USL
1.
1.8
1.9
-11. -11. -11 -10. -10. -10.1 -9.8 -9.
Gain at 12 GHz
Noise Figure at 12 GHz
Return Loss at 12 GHz
Typical distribution of Small Signal Gain, Noise Figure, and Return Loss. Based on 1500 part sampled over several
production lots.
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