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BF1210 查看數據表(PDF) - Philips Electronics

零件编号
产品描述 (功能)
生产厂家
BF1210
Philips
Philips Electronics Philips
BF1210 Datasheet PDF : 21 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
8.1.2 Scattering parameters for amplifier A
Table 9. Scattering parameters for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA; VDS(B) = 0 V; VG1-S(B) = 0 V; Tamb = 25 °C; typical values.
f (MHz) s11
s21
s12
s22
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
Angle
(deg)
Magnitude
(ratio)
40
0.9861
3.2
3.14
176.75 0.00054
87.97 0.9934
100
0.9883
7.84 3.14
171.53 0.00104
87.69 0.9925
200
0.9844
15.7 3.12
163.1 0.00205
80.77 0.9918
300
0.9761
23.52 3.08
154.65 0.00295
76.33 0.9904
400
0.9635
31.26 3.03
146.33 0.00375
72.34 0.9888
500
0.9486
38.78 2.97
138.15 0.00437
67.97 0.9870
600
0.9305
46.2 2.90
130.12 0.00483
64.86 0.9847
700
0.9105
53.33 2.81
122.26 0.0051
62.13 0.9832
800
0.8911
60.2 2.73
114.65 0.0052
59.88 0.9817
900
0.8723
67.03 2.65
107.2 0.00515
58.8
0.9796
1000 0.8521
73.74 2.56
99.78 0.00498
58.03 0.9785
Angle
(deg)
1.19
2.85
5.69
8.51
11.33
14.13
16.87
19.61
22.35
25.03
27.08
8.2 Noise data for amplifier A
Table 10. Noise data for amplifier A
VDS(A) = 5 V; VG2-S = 4 V; ID(A) = 19 mA, Tamb = 25 °C; typical values.
f (MHz)
NFmin (dB)
Γopt
(ratio)
400
0.9
0.749
800
1.2
0.688
(deg)
23.7
48.65
rn (ratio)
0.667
0.583
8.3 Dynamic characteristics for amplifier B
Table 11. Dynamic characteristics for amplifier B
Common source; Tamb = 25 °C; VG2-S = 4 V; VDS(B) = 5 V; ID(B) = 13 mA.
Symbol Parameter
Conditions
|yfs|
forward transfer admittance Tj = 25 °C
Ciss(G1) input capacitance at gate1 f = 100 MHz
Ciss(G2) input capacitance at gate2 f = 100 MHz
Coss
output capacitance
f = 100 MHz
Crss
reverse transfer capacitance f = 100 MHz
Gtr
transducer power gain
BS = BS(opt); BL = BL(opt)
f = 200 MHz; GS = 2 mS; GL = 0.5 mS
f = 400 MHz; GS = 2 mS; GL = 1 mS
f = 800 MHz; GS = 3.3 mS; GL = 1 mS
NF
noise figure
f = 11 MHz; GS = 20 mS; BS = 0 S
f = 400 MHz; YS = YS(opt)
f = 800 MHz; YS = YS(opt)
Min
28
[1] -
[1] -
[1] -
[1] -
[1]
32
29
27
-
-
-
Typ Max Unit
33 43 mS
1.9 2.4 pF
3.4 -
pF
0.85 -
pF
20 -
fF
36 40 dB
33 37 dB
31 35 dB
4
-
dB
0.9 1.5 dB
1.2 1.9 dB
BF1210_1
Product data sheet
Rev. 01 — 25 October 2006
© NXP B.V. 2006. All rights reserved.
11 of 21

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