BF410A 查看數據表（PDF） - Philips Electronics
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BF410A Datasheet PDF : 6 Pages
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Philips Semiconductors
N-channel silicon field-effect transistors
Product specification
BF410A to D
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
Drain-gate voltage (open source)
Drain current (DC or average)
Gate current
Total power dissipation up to Tamb = 75 °C
Storage temperature range
Junction temperature
VDS
VDGO
ID
± IG
Ptot
Tstg
Tj
max. 20 V
max. 20 V
max. 30 mA
max. 10 mA
max. 300 mW
−65 to +150 °C
max. 150 °C
THERMAL RESISTANCE
From junction to ambient in free air
Rth j-a
=
250 K/W
STATIC CHARACTERISTICS
Tamb = 25 °C
Gate cut-off current
−VGS = 0.2 V; VDS = 0
Gate-drain breakdown voltage
IS = 0; −ID = 10 µA
Drain current
VDS = 10 V; VGS = 0
Gate-source cut-off voltage
ID = 10 µA; VDS = 10 V
−IGSS
BF410A
max.
10
B
CD
10 10 10 nA
−V(BR)GDO min.
20
20 20 20 V
min.
0.7 2.5 6 10 mA
IDSS
max.
3.0 7.0 12 18 mA
−V(P)GS
typ.
0.8 1.5 2.2 3 V
December 1990
3
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