BS62LV4006 查看數據表（PDF） - Brilliance Semiconductor

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BS62LV4006

Very Low Power CMOS SRAM 512K X 8 bit

Brilliance Semiconductor 

n PACKAGE DIMENSIONS (continued)

32

17

1

ZD

e

YY

b

16

D

Y

-T-

SEATING PLANE

BS62LV4006

DIMENSION

(MM)

DIMENSION

(INCH)

MIN. NOM. MAX. MIN. NOM. MAX.

A

1.20

0.047

A1 0.05

0.10

0.15

0.002 0.004 0.006

A2 0.95

1.00

1.05

0.037 0.039 0.042

b

0.30

0.52

0.012

0.020

b1 0.30

c

0.12

0.40

0.45

0.21

0.012

0.005

0.016

0.018

0.008

c1

0.10

0.127 0.16

0.004 0.005 0.006

D

20.82 20.95 21.08 0.820 0.825 0.830

E

11.56 11.76 11.96 0.455 0.463 0.471

"X"

E1 10.03 10.16 10.29 0.394 0.400 0.405

e

1.27 BASIC

0.050 BASIC

L

0.40

0.50

0.60

L1

0.25 BASIC

L2

0.8 REF

R

0.12

0.25

0.016 0.020 0.024

0.010 BASIC

0.031 REF

0.005

0.010

R1 0.12

0.005

ZD

0.95 REF

0.037 REF

Y

0.10

0.004

RAD R

L

RAD R1

L2

b

b1

GAGE PLANE

WITH PLATING

BASE METAL

DETAIL "X"

SECTION Y-Y

TSOP II - 32

NOTE:

1. CONTROLLING DIMENSION : MILLIMETERS.

2. REFREENCE DOCUMENT : JEDEC MS-024

3. DIMENSION D DOES NOT INCLUDE MOLD PROTRUSION.

MOLD PROTRUSION SHALL NOT EXCEED 0.15(0.006") PER SIDE.

DIMENSION E1 DOES NOT INCLUDE INTERLEAD PROTRUSION.

INTERLEAD PROTRUSION SHALL NOT EXCEED 0.25(0.01") PER SIDE.

4. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSIONS/INTRUSION.

ALLOWABLE DAMBAR PROTRUSION SHALL NOT CAUSE THE LEAD TO

BE WIDER THAN THE MAX b DIMENSION BY MORE THAN 0.13mm

DAMBAR INTRUSION SHALL NOT CAUSE THE LEAD TO BE NARROWER

THAN THE MIN b DIMENSION BY MORE THAN 0.07mm.

R0201-BS62LV4006

11

Revision 1.4

May.

2006

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