BS62LV4006 查看數據表（PDF） - Brilliance Semiconductor
零件编号
产品描述 (功能)
生产厂家
BS62LV4006 Datasheet PDF : 12 Pages
| |||
n DC ELECTRICAL CHARACTERISTICS (TA = -40OC to +85OC)
PARAMETER
NAME
PARAMETER
VCC
Power Supply
TEST CONDITIONS
BS62LV4006
MIN. TYP.(1) MAX. UNITS
2.4
--
5.5
V
VIL
Input Low Voltage
-0.5(2)
--
0.8
V
VIH
Input High Voltage
IIL
Input Leakage Current
VCC = Max, VIN = 0V to VCC
ILO
Output Leakage Current VCC = Max, CE= VIH, or OE = VIH,
VI/O = 0V to VCC
VOL
Output Low Voltage
VCC = Max, IOL = 2.0mA
2.2
--
VCC+0.3(3)
V
--
--
1
UA
--
--
1
UA
--
--
0.4
V
VOH
Output High Voltage
VCC = Min, IOH = -1.0mA
2.4
--
--
V
ICC(5)
Operating Power Supply CE = VIL,
Current
IDQ = 0mA, f = FMAX(4)
VCC=3.0V
--
VCC=5.0V
30
--
mA
70
ICC1
Operating Power Supply CE = VIL,
Current
IDQ = 0mA, f = 1MHz
VCC=3.0V
--
VCC=5.0V
2
--
mA
10
ICCSB
Standby Current – TTL
CE = VIH,
IDQ = 0mA
VCC=3.0V
--
VCC=5.0V
0.5
--
mA
1.0
ICCSB1(6)
Standby Current – CMOS
CE≧VCC-0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
VCC=3.0V
--
VCC=5.0V
0.25
4.0
1.5
20
uA
1. Typical characteristics are at TA=25OC and not 100% tested.
2. Undershoot: -1.0V in case of pulse width less than 20 ns.
3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.
4. FMAX=1/tRC.
5. ICC (MAX.) is 29mA/68mA at VCC=3.0V/5.0V and TA=70OC.
6. ICCSB1(MAX.) is 2.0uA/10uA at VCC=3.0V/5.0V and TA=70OC.
n DATA RETENTION CHARACTERISTICS (TA = -40OC to +85OC)
SYMBOL
VDR
ICCDR(3)
tCDR
tR
PARAMETER
TEST CONDITIONS
VCC for Data Retention
CE≧VCC-0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
Data Retention Current
CE≧VCC-0.2V,
VIN≧VCC-0.2V or VIN≦0.2V
Chip Deselect to Data
Retention Time
See Retention Waveform
Operation Recovery Time
1. VCC=1.5V, TA=25OC and not 100% tested.
2. tRC = Read Cycle Time.
3. ICCRD(Max.) is 1.0uA at TA=70OC.
n LOW VCC DATA RETENTION WAVEFORM (1) (CE Controlled)
VCC
CE
VCC
tCDR
VIH
Data Retention Mode
VDR≧1.5V
CE≧VCC - 0.2V
MIN.
1.5
TYP. (1)
--
MAX.
--
UNITS
V
--
0.1
1.5
uA
0
--
tRC (2)
--
--
ns
--
ns
VCC
tR
VIH
R0201-BS62LV4006
3
Revision 1.4
May.
2006
Share Link: 