BS62LV4006 查看數據表（PDF） - Brilliance Semiconductor

零件编号

产品描述 (功能)

生产厂家

BS62LV4006

Very Low Power CMOS SRAM 512K X 8 bit

Brilliance Semiconductor 

n SWITCHING WAVEFORMS (READ CYCLE)

READ CYCLE 1 (1,2,4)

tRC

ADDRESS

DOUT

tAA

tOH

READ CYCLE 2 (1,3,4)

CE

DOUT

tACS

tCLZ(5)

READ CYCLE 3 (1, 4)

ADDRESS

OE

CE

DOUT

tRC

tAA

tOE

tOLZ

tACS

tCLZ(5)

NOTES:

1. WE is high in read Cycle.

2. Device is continuously selected when CE = VIL.

3. Address valid prior to or coincident with CE transition low.

4. OE = VIL.

5. Transition is measured ± 500mV from steady state with CL = 5pF.

The parameter is guaranteed but not 100% tested.

R0201-BS62LV4006

5

BS62LV4006

tOH

tCHZ (5)

tOH

tOHZ(5)

tCHZ(1,5)

Revision 1.4

May.

2006

Share Link: