BS62LV4008 查看數據表（PDF） - Brilliance Semiconductor

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BS62LV4008

Very Low Power/Voltage CMOS SRAM 512K X 8 bit

Brilliance Semiconductor 

BSI

READ CYCLE2 (1,3,4)

CE

D OUT

READ CYCLE3 (1,4)

ADDRESS

OE

CE

D OUT

t ACS

(5)

t CLZ

t RC

t AA

t OE

t OLZ

t ACS

(5)

t CLZ

NOTES:

1. WE is high in read Cycle.

2. Device is continuously selected when CE = VIL.

3. Address valid prior to or coincident with CE transition low.

4. OE = VIL .

5. The parameter is guaranteed but not 100% tested.

BS62LV4008

t (5)

CHZ

t OH

t OHZ (5)

t (1,5)

CHZ

R0201-BS62LV4008

5

Revision 1.1

Jan. 2004

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