BUZ356 查看數據表（PDF） - Siemens AG

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BUZ356

SIPMOS® Power Transistor

Siemens AG 

BUZ 356

Electrical Characteristics, at Tj = 25°C, unless otherwise specified

Parameter

Symbol

min.

Values

typ.

max.

Dynamic Characteristics

Transconductance

VDS≥ 2 * ID * RDS(on)max, ID = 3.9 A

Input capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Output capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Reverse transfer capacitance

VGS = 0 V, VDS = 25 V, f = 1 MHz

Turn-on delay time

VDD = 30 V, VGS = 10 V, ID = 2.1 A

RGS = 50 Ω

Rise time

VDD = 30 V, VGS = 10 V, ID = 2.1 A

RGS = 50 Ω

Turn-off delay time

VDD = 30 V, VGS = 10 V, ID = 2.1 A

RGS = 50 Ω

Fall time

VDD = 30 V, VGS = 10 V, ID = 2.1 A

RGS = 50 Ω

gfs

2.5

Ciss

-

Coss

-

Crss

-

td(on)

-

tr

-

td(off)

-

tf

-

6.8

-

1750 2350

190

290

100

150

25

40

130

200

400

530

130

175

Unit

S

pF

ns

Semiconductor Group

3

07/96

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