BUZ350 查看數據表（PDF） - Infineon Technologies

零件编号

产品描述 (功能)

生产厂家

BUZ350

SIPMOS ® Power Transistor

Infineon Technologies 

BUZ 350

Electrical Characteristics, at Tj = 25˚C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

Reverse Diode

Inverse diode continuous forward current

IS

TC = 25 ˚C

-

Inverse diode direct current,pulsed

ISM

TC = 25 ˚C

-

Inverse diode forward voltage

VSD

VGS = 0 V, IF = 44 A

-

Reverse recovery time

trr

VR = 100 V, IF=lS, diF/dt = 100 A/µs

-

Reverse recovery charge

Qrr

VR = 100 V, IF=lS, diF/dt = 100 A/µs

-

A

-

22

-

88

V

1.2

1.7

ns

180

-

µC

1.2

-

Data Sheet

4

05.99

Share Link: