BYW51 查看數據表（PDF） - STMicroelectronics
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BYW51 Datasheet PDF : 9 Pages
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BYW51/F/G/FP/R-200
THERMAL RESISTANCES
Symbol
Parameter
Rth (j-c) Junction to case
TO-220AB / D2PAK / I2PAK Per diode
Total
ISOWATT220AB
Per diode
Total
TO-220FPAB
Per diode
Total
Rth (c) Coupling
TO-220AB / D2PAK / I2PAK
ISOWATT220AB
TO-220FPAB
When diodes 1 and 2 are used simultaneously :
∆Tc (diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
Value
2.5
1.4
5.1
4.05
5.7
4.6
0.25
3.0
3.5
Unit
°C/W
°C/W
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Symbol
Parameter
Test Conditions
IR * Reverse leakage current Tj = 25°C
VR = VRRM
Tj = 100°C
VF ** Forward voltage drop
Tj = 125°C
IF = 8 A
Tj = 125°C
IF = 16 A
Tj = 25°C
IF = 16 A
Pulse test :* tp = 5 ms, δ < 2 %
** tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation :
P = 0.65 x IF(AV) + 0.025 x IF2(RMS)
Min.
Typ.
Max.
15
1
0.85
1.05
1.15
Unit
µA
mA
V
RECOVERY CHARACTERISTICS
Symbol
trr
Tj = 25°C
tfr
Tj = 25°C
VFP
Tj = 25°C
Test Conditions
IF = 0.5A
IR = 1A
IF = 1A
VR = 30V
IF = 1A
VFR = 1.1 x VF max
IF = 1A
Irr = 0.25A
dIF/dt = -50A/µs
dIF/dt = -50A/µs
dIF/dt = -50A/µs
Typ. Max. Unit
25 ns
35
15
ns
2
V
2/9
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