CY14B256L-SP25XC 查看數據表（PDF） - Cypress Semiconductor
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CY14B256L-SP25XC Datasheet PDF : 18 Pages
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CY14B256L
AutoStore or Power Up RECALL
Parameter
tHRECALL [12]
tSTORE [13, 14]
VSWITCH
tVCCRISE
Alt
tRESTORE
tHLHZ
Description
Power up RECALL Duration
STORE Cycle Duration
Low Voltage Trigger Level
VCC Rise Time
CY14B256L
Unit
Min
Max
20
ms
12.5
ms
2.65
V
150
μs
Switching Waveforms
Figure 9. AutoStore/Power Up RECALL
VCC
VSWITCH
STORE occurs only
if a SRAM write
has happened
No STORE occurs
without atleast one
SRAM write
tVCCRISE
AutoStore
tSTORE
POWER-UP RECALL
Read & Write Inhibited
tHRECALL
tHRECALL
Note Read and Write cycles are ignored during STORE, RECALL, and while Vcc is below VSWITCH
tSTORE
Notes
12. tHRECALL starts from the time VCC rises above VSWITCH.
13. If an SRAM WRITE has not taken place since the last nonvolatile cycle, no STORE will take place.
14. Industrial grade devices requires 15 ms max.
Document Number: 001-06422 Rev. *H
Page 11 of 18
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