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CY7C199CN(2011) 查看數據表(PDF) - Cypress Semiconductor

零件编号
产品描述 (功能)
生产厂家
CY7C199CN
(Rev.:2011)
Cypress
Cypress Semiconductor Cypress
CY7C199CN Datasheet PDF : 14 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
CY7C199CN
AC Electrical Characteristics [4]
Parameter
Description
tRC
tAA
tOHA
tACE
tDOE
tLZOE
tHZOE
tLZCE
tHZCE
tPU
tPD
tWC
tSCE
tAW
tHA
tSA
tPWE
tSD
tHD
tHZWE
tLZWE
Read Cycle Time
Address to Data Valid
Data Hold from Address Change
CE to Data Valid
OE to Data Valid
OE to Low-Z [5]
OE to High-Z [5, 6]
CE to Low-Z [5]
CE to High-Z [5, 6]
CE to Power Up
CE to Power Down
Write Cycle Time [7]
CE to Write End
Address Setup to Write End
Address Hold from Write End
Address Setup to Write Start
WE Pulse Width
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z [5, 6]
WE HIGH to Low-Z [5]
–15
Min Max
15
15
3
15
7
0
7
3
7
0
15
15
10
10
0
0
9
9
0
7
3
–20
Unit
Min Max
20
ns
20 ns
3
ns
20 ns
9
ns
0
ns
9
ns
3
ns
9
ns
0
ns
20 ns
20
ns
15
ns
15
ns
0
ns
0
ns
15
ns
10
ns
0
ns
10 ns
3
ns
Data Retention Characteristics [8]
Parameter
Description
Condition
VDR
ICCDR
tCDR
VCC for Data Retention
Data Retention Current
Chip Deselect to Data
Retention Time
VCC = VDR = 2.0 V, CE VCC – 0.3 V,
VIN VCC – 0.3 V or VIN 0.3 V
tR
Operation Recovery Time
Min
Max
Unit
2.0
V
150
μA
0
ns
200
μs
Notes
4. Test Conditions are based on a transition time of 3 ns or less and timing reference levels of 1.5 V, and input pulse levels of 0 to 3.0 V.
5. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.
6. tHZOE, tHZCE, tHZWE are specified as in part (b) of the “” on page 5. Transitions are measured ± 200 mV from steady state voltage.
7. The internal memory write time is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these
signals can terminate the write. The input data setup and hold timing must be referenced to the leading edge of the signal that terminates the write.
8. L-version only.
Document #: 001-06435 Rev. *E
Page 7 of 18
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