EDE1108AJBG-1 查看數據表（PDF） - Elpida Memory, Inc

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EDE1108AJBG-1

1G bits DDR2 SDRAM

Elpida Memory, Inc 

EDE1108AJBG-1, EDE1116AJBG-1

ODT DC Electrical Characteristics (TC = 0°C to +85°C, VDD, VDDQ = 1.8V ± 0.1V)

Parameter

Symbol

min.

typ.

Rtt effective impedance value for EMRS (1) (A6, A2) = 0, 1; 75Ω Rtt1 (eff) 60

75

Rtt effective impedance value for EMRS (1) (A6, A2) = 1, 0; 150Ω Rtt2 (eff) 120

150

Rtt effective impedance value for EMRS (1) (A6, A2) = 1, 1; 50Ω Rtt3 (eff) 40

50

Deviation of VM with respect to VDDQ/2

∆VM

−6



Note: 1. Test condition for Rtt measurements.

max. Unit

90

Ω

180

Ω

60

Ω

+6

%

Note

1

1

1

1

Measurement Definition for Rtt (eff)

Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH (AC)) and I(VIL (AC)) respectively.

VIH (AC), and VDDQ values defined in SSTL_18.

Rtt(eff ) = VIH(AC) −VIL(AC)

I(VIH(AC)) − I(VIL(AC))

Measurement Definition for ∆VM

Measure voltage (VM) at test pin (midpoint) with no load.

∆VM

=





2 ×VM

VDDQ

−

1 



×

100

Pin Capacitance (TA = 25°C, VDD, VDDQ = 1.8V ± 0.1V)

Parameter

Symbol Pins

min.

CLK input pin capacitance

CCK CK, /CK

1.0

Input pin capacitance

Input/output pin capacitance

CIN

CI/O

/RAS, /CAS,

/WE, /CS,

CKE, ODT,

1.0

Address

DQ, DQS, /DQS,

UDQS, /UDQS,

LDQS, /LDQS,

2.5

RDQS, /RDQS, DM,

UDM, LDM

Notes: 1. Matching within 0.25pF.

2. Matching within 0.50pF.

max.

2.0

1.75

Unit

Notes

pF

1

pF

1

3.5

pF

2

Data Sheet E1733E31 (Ver.3.1)

12

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