FDFS2P102 查看數據表（PDF） - Fairchild Semiconductor
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FDFS2P102 Datasheet PDF : 5 Pages
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Typical Characteristics (continued)
10
ID = 7.6A
8
6
VDS = 10V
20V
40V
4
2
0
0
5
10
15
20
25
30
35
Qg, GATE CHARGE (nC)
Figure 7. Gate-Charge Characteristics.
10
5
2
1
0.5
0.2
0.1
0
TJ = 125 C
25 C
0.1
0.2
0.3
0.4
0.5
0.6
V F , FORWARD VOLTAGE (V)
Figure 9. Schottky Diode Forward Voltage.
2400
2000
1600
CISS
f = 1MHz
VGS = 0 V
1200
800
400
COSS
CRSS
0
0
10
20
30
40
50
60
70
80
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
0.001
0.0005
0.0002
TJ = 25 C
0.0001
0
5
10
15
20
V R , REVERSE VOLTAGE (V)
Figure 10. Schottky Diode Reverse Current.
1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
0.002
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA (t) = r(t) * R θJA
RθJA =135 C/W
P(pk)
t1
t2
TJ - TA = P * RθJA (t)
Duty Cycle, D = t1 /t2
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDFS2P102 Rev. E
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