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FDP10N60NZ 查看數據表(PDF) - Fairchild Semiconductor

零件编号
产品描述 (功能)
生产厂家
FDP10N60NZ
Fairchild
Fairchild Semiconductor Fairchild
FDP10N60NZ Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
March 2013
FDP10N60NZ / FDPF10N60NZ
N-Channel UniFETTM II MOSFET
600 V, 10 A, 750 m
Features
• RDS(on) = 640 m(Typ.) @ VGS = 10 V, ID = 5 A
• Low Gate Charge (Typ. 23 nC)
• Low Crss (Typ. 10 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS compliant
Applications
• LCD/ LED/ PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor®’s high volt-
age MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher ava-
lanche energy strength. In addition, internal gate-source ESD
diode allows UniFETTM II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
D
G
G
D
S
TO-220
G
D
S
TO-220F
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP10N60NZ FDPF10N60NZ
600
±25
10
10*
6
6*
40
40*
550
10
18.5
10
185
38
1.5
0.3
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
-55 to +150
300
*Dran current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
RJC
RCS
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
FDP10N60NZ
0.68
0.5
62.5
FDPF10N60NZ
3.3
-
62.5
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Unit
oC/W
©2010 Fairchild Semiconductor Corporation
1
FDP10N60NZ / FDPF10N60NZ Rev. C0
www.fairchildsemi.com

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