FQA13N50CF 查看數據表（PDF） - Fairchild Semiconductor
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FQA13N50CF Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
V
GS
15.0 V
10.0 V
8.0 V
7.0 V
101
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
Notes :
1. 250us Pulse Test
2. T = 25°C
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 2. Transfer Characteristics
101
150°C
25°C
100
-55°C
10-1
2
Notes :
1. V = 40V
DS
2. 250µs Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
1.5
V = 10V
GS
1.0
0.5
0
V = 20V
GS
Note : T = 25°C
J
5
10
15
20
25
30
35
I , Drain Current [A]
D
Figure 5. Capacitance Characteristics
3000
2500
2000
1500
1000
500
0
10-1
C
iss
C
oss
C
rss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
Notes ;
1. V = 0 V
GS
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
101
100
10-1
0.2
150°C
25°C
Notes :
1. V = 0V
GS
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 6. Gate Charge Characteristics
12
V = 100V
DS
10
V = 250V
DS
V = 400V
8
DS
6
4
2
Note : I = 15A
D
0
0
10
20
30
40
50
Q , Total Gate Charge [nC]
G
©2007 Fairchild Semiconductor Corporation
3
FQA13N50CF Rev. C0
www.fairchildsemi.com
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