FQPF7N65CYDTU 查看數據表（PDF） - Fairchild Semiconductor
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FQPF7N65CYDTU Datasheet PDF : 10 Pages
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Package Marking and Ordering Information
Device Marking
FQPF7N65C
FQPF7N65C
Device
FQPF7N65C
FQPF7N65CYDTU
Package
TO-220F
TO-220F (Y-formed)
Reel Size
-
-
Tape Width
-
-
Quantity
50
50
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
650 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ Coefficient
ID = 250 µA, Referenced to 25°C --
0.8
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
VDS = 520 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3.5 A
VDS = 40 V, ID = 3.5 A
2.0 --
4.0
V
--
1.2
1.4
Ω
--
8
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 955 1245 pF
-- 100 130
pF
--
12
16
pF
Switching Characteristics
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 325 V, ID = 7A,
RG = 25 Ω
--
20
50
ns
--
50
110
ns
--
90 190
ns
(Note 4)
--
55 120
ns
VDS = 520 V, ID = 7A,
--
28
36
nC
VGS = 10 V
-- 4.5
--
nC
(Note 4)
--
12
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 7A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 7A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 8mH, IAS = 7A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 7A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
--
--
7
A
--
--
28
A
--
--
1.4
V
-- 400
--
ns
-- 3.3
--
µC
©2004 Fairchild Semiconductor Corporation
FQPF7N65C Rev. C1
www.fairchildsemi.com
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