HSD4M64D4B 查看數據表（PDF） - Hanbit Electronics Co.,Ltd

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HSD4M64D4B

Synchronous DRAM Module 32Mbyte (4Mx64-Bit), DIMM, 4Banks, 4K Ref., 3.3V

Hanbit Electronics Co.,Ltd 

HANBit

HSD4M64D4B

Notes :

1. VIH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.

2. VIL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.

3. Any input 0V ≤ VIN ≤ VDDQ.

Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.

CAPACITANCE

(VCC = 3.3V, TA = 23°C, f = 1MHz, VREF =1.4V ± 200 mV)

DESCRIPTION

SYMBOL

MIN

Clock

/RAS, /CAS,/WE,/CS, CKE, L(U)DQM

Address

DQ (DQ0 ~ DQ15)

CCLK

15

CIN

30

CADD

30

COUT

5

MAX

25

40

40

15

UNITS

pF

pF

pF

pF

DC CHARACTERISTICS

(Recommended operating condition unless otherwise noted, TA = 0 to 70°C)

PARAMETER

SYMBOL

TEST

CONDITION

VERSION

80

10

10L

Operating current

(One bank active)

Burst length = 1

ICC1

tRC ≥ tRC(min)

IO = 0mA

300

280

280

CKE ≤ VIL(max)

ICC2P

4

Precharge standby current in

tCC=10ns

power-down mode

CKE & CLK ≤ VIL(max)

ICC2PS

4

tCC=∞

CKE ≥ VIH(min)

CS* ≥ VIH(min), tCC=10ns

ICC2N

48

Input signals are changed

Precharge standby current in

one time during 20ns

non power-down mode

CKE ≥ VIH(min)

ICC2NS

CLK ≤ VIL(max), tCC=∞

24

Input signals are stable

ICC3P

CKE ≤ VIL(max), tCC=10ns

8

Active standby current in

CKE&CLK ≤ VIL(max)

power-down mode

ICC3PS

8

tCC=∞

UNIT NOTE

mA

1

mA

mA

mA

mA

URL:www.hbe.co.kr

-5-

REV.1.0 (August.2002)

HANBit Electronics Co.,Ltd

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