IS61NSCS25672 查看數據表（PDF） - Integrated Silicon Solution

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IS61NSCS25672

ΣRAM 256K x 72, 512K x 36 18Mb Synchronous SRAM

Integrated Silicon Solution 

IS61NSCS25672

IS61NSCS51236

ISSI ®

CMOS I/O DC Input Characteristics

Symbol Parameter

VCCQ

Min.

VIH

CMOS Input High Voltage

1.8

1.2

1.5

1.0

VIL

CMOS Input Low Voltage

1.8

–0.3

1.5

–0.3

Note:

For devices supplied with CMOS input buffers. Compatible with both 1.8 V and 1.5 V I/O drivers.

Typ.

—

—

—

—

Max. Unit

VCCQ + 0.3 V

VCCQ + 0.3

0.6

V

0.5

Undershoot Measurement and Timing

VIH

GND

50%

GND - 1.0V

20% tKC

Overshoot Measurement and Timing

VCC + 1.0V

50%

VCC

VIL

20% tKC

I/O CAPACITANCE (TA = 25 °C, f = 1 MHZ)

Symbol

Parameter

CA

Address

CB

Control

CCK

Clock

Input Capacitance

Input Capacitance

Input Capacitance

CDQ

Data

Output Capacitance

CCQ

CQ Clock

Output Capacitance

Note: These parameters are sampled and not 100% tested.

Test conditions

VIN = 0 V

VIN = 0 V

VIN = 0 V

VOUT = 0 V

VOUT = 0 V

Min.

Max.

Unit

—

3.5

pF

—

3.5

pF

—

3.5

pF

—

4.5

pF

—

4.5

pF

Integrated Silicon Solution, Inc. — 1-800-379-4774

17

ADVANCE INFORMATION Rev. 00A

06/19/01

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