IS61NSCS25672 查看數據表（PDF） - Integrated Silicon Solution

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IS61NSCS25672

ΣRAM 256K x 72, 512K x 36 18Mb Synchronous SRAM

Integrated Silicon Solution 

IS61NSCS25672

IS61NSCS51236

AC TEST CONDITIONS

(VCC = 1.8V ± 0.1V, TA = 0 to 85°C)

Parameter

Symbol

Conditions

VCCQ

1.5V±0.1

1.8 ±0.1

Input High Level

VIH

1.25

1.4

Input Low Level

VIL

0.25

0.4

Input Rise & Fall Time

2.0

2.0

Input Reference Level

0.75

0.9

Clock Input High Voltage

VKIH

1.25

1.4

Clock Input Low Voltage

VKIL

0.25

0.4

Clock Input Rise & Fall Time

2.0

2.0

Clock Input Reference Level

0.75

0.9

Output Reference Level

0.75

0.9

Output Load Conditions ZQ = VIH

see below

see below

Notes:

1. Include scope and jig capacitance.

2. Test conditions as specified with output loading as shown unless otherwise noted.

ISSI ®

Units

V

V

V

V/ns

V

V

V

V/ns

V

V

AC TEST LOADS

VCCQ = 1.5V

16.7Ω

DQ

16.7Ω

16.7Ω

0.75V

50Ω

50Ω

5 pF

50Ω

5 pF

50Ω

0.75V

Figure 1 (VCCQ = 1.5V)

VCCQ = 1.8V

16.7Ω

DQ

16.7Ω

16.7Ω

0.9V

50Ω

50Ω

5 pF

50Ω

5 pF

50Ω

0.9V

Figure 2 (VCCQ = 1.8V)

18

Integrated Silicon Solution, Inc. — 1-800-379-4774

ADVANCE INFORMATION Rev. 00A

06/19/01

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