KA5M0765RQC-TU 查看數據表（PDF） - Fairchild Semiconductor
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KA5M0765RQC-TU Datasheet PDF : 12 Pages
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Typical Performance Characteristics (SFET part)
KA5M0765RQC
VGS
Top : 15.0 V
101
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
※ Note :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. Output Characteristics
101
150℃
100
25℃
-55℃
10-1
2
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
3.0
VGS = 10V
2.5
VGS = 20V
2.0
1.5
1.0
0
3
6
9
12
15
18
I , DrainCurrent [A]
D
Figure 3. On-Resistance vs. Drain Curren t
101
100
10-1
0.2
150℃ 25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VSD, Source-Drain voltage [V]
Figure 4. Source-Drain Diode Forward Voltage
2500
2000
1500
1000
500
0
10-1
Ciss
Coss
C
rss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
Crss = Cgd
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
12
VDS = 130V
10
VDS = 325V
V = 520V
DS
8
6
4
2
※ Note : ID = 6.5 A
0
0
5
10
15
20
25
30
35
40
45
QG, Total Gate Charge [nC]
Figure 5. Capacitance vs. Drain-Source Voltage Figure 6. Gate Charge vs. Gate-Source Voltage
5
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