BS170 查看數據表（PDF） - Philips Electronics
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BS170 Datasheet PDF : 8 Pages
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Philips Semiconductors
N-channel vertical D-MOS transistor
Product specification
BS170
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
VDS
Drain-gate voltage
VDG
Gate-source voltage
VGS
Drain current (DC) at Tc = 25 °C
ID
Total power dissipation up to Tamb = 25 °C
Ptot
Storage temperature range
Tstg
Junction temperature
Tj
THERMAL RESISTANCE
From junction to ambient
Rth j-a
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Drain-source breakdown voltage
VGS = 0; ID = 100 µA
V(BR)DS
Gate threshold voltage
VGS = VDS; ID = 1 mA
VGS(th)
Gate-source leakage current
VGS = 15 V; VDS = 0
Drain cut-off current
VDS = 25 V; VGS = 0
Drain-source ON-resistance (note 1)
VGS = 10 V; ID = 200 mA
Forward transconductance (note 1)
VDS = 10 V; ID = 200 mA; f = 1 kHz
Capacitances at f = 1 MHz
VDS = 10 V; VGS = 0
IGSoff
IDSS
RDS(on)
gfs
Ciss
Cos
Crs
Switching times at ID = 200 mA
ID = 200 mA; VDS = 50 V;
ton
VGS = 0 to 10 V
toff
April 1995
3
max.
max.
max.
max.
max.
max.
60 V
60 V
15 V
500 mA
830 mW
−55 to +150 °C
150 °C
=
150 K/W
min.
typ.
min.
max.
max.
max.
typ.
max.
typ.
typ.
max.
typ.
max.
typ.
max.
typ.
max.
typ.
max.
60 V
90 V
0.8 V
3.0 V
10 nA
0.5 µA
2.5 Ω
5.0 Ω
200 mS
25 pF
40 pF
22 pF
30 pF
6 pF
10 pF
4 ns
10 ns
4 ns
10 ns
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