MTD9N10E1(2005) 查看數據表（PDF） - ON Semiconductor
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MTD9N10E1 Datasheet PDF : 12 Pages
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MTD9N10E
TYPICAL ELECTRICAL CHARACTERISTICS
18
16
VGS = 10 V
TJ = 25°C
14
8V
12
7V
10
8
6
6V
4
2
5V
4V
0
0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
18
16 VDS ≥ 10 V
TJ = − 55°C
14
25°C
12
100°C
10
8
6
4
2
0
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.45
VGS = 10 V
0.40
0.35
0.30
TJ = 100°C
0.25
0.20
25°C
0.15
0.10
0
− 55°C
2 4 6 8 10 12 14 16 18
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
0.25
TJ = 25°C
0.23
0.21
0.19
VGS = 10 V
0.17
15 V
0.15
0 2 4 6 8 10 12 14 16 18
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1.9
VGS = 10 V
1.7 ID = 4.5 A
1.5
1.3
1.1
0.9
0.7
0.5
− 50 − 25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100
VGS = 0 V
TJ = 125°C
10
100°C
1.0
25°C
0.1
30
40
50
60
70
80
90 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
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