GS820V32Q 查看數據表（PDF） - Giga Semiconductor

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GS820V32Q

64K x 32 Burst

Giga Semiconductor 

GSI TECHNOLOGY

GS820V32Q/T

4/5/6, 2.5V I/O, 2.0mA

64K x 32 Burst

GS820V32Q/T

80-133MHz (P/L)

66MHz Flow-Thru

Absolute Maximum Ratings (Voltage reference to VSS=0V)

Parameter

Symbol

Rating

Unit

Supply Voltage

VDD

-0.5 to 4.6

V

Output Supply Voltage

VDDQ

-0.5 to VDD

V

CLK Input Voltage

VCLK

-0.5 to 6

V

Input Voltage

VIN

-0.5 to VDD+0.5

V

(≤ 4.6 V max. )

Output Voltage

VOUT

-0.5 to VDD+0.5

V

(≤ 4.6 V max. )

Power Dissipation

PD

Operating Temperature

Topr

Storage Temperature

Tstg

1.5

W

0 to 70

oC

-55 to 150

oC

Note: Permanent device damage may occur if Absolute Maximum Ratings are exceeded. Functional operation should be

restricted to Recommended Operating Conditions. Exposure to higher than recommended voltages for extended periods

of time could affect device reliability.

Recommended Operating Conditions (Voltage reference to VSS=0V)

(VDD=3.135V to 3.465V, Ta=0 70C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Supply Voltage

VDD

3.135

3.3

3.465

V

Output Supply Voltage

VDDQ

2.375

3.3

3.465

V

Input High Voltage

VIH

1.7

--- VDD+0.3 V

Input Low Voltage

VIL

-0.3

---

0.8

V

Note: Input overshoot voltage should be less than VDD+2V and not exceed 5ns.

Input undershoot voltage should be higher than -2V and not exceed 5ns.

Capacitance ( Ta=25C, f=1MHz)

Parameter

Input Capacitance

Output Capacitance

Symbol

CIN

COUT

Test conditions

VIN=0V

VOUT=0V

Typ. Max. Unit

4

5

pF

6

7

pF

Note: These parameters are sampled and are not 100% tested.

Rev. 9/09/97

5/15

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