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RF3806 查看數據表(PDF) - RF Micro Devices

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RF3806
RFMD
RF Micro Devices RFMD
RF3806 Datasheet PDF : 18 Pages
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RF3806
Theory of Operation
General biasing considerations can be described using RF3806 UMTS evaluation board as a reference. In actual system,
3
VCC=VBIAS=VREF can be tied together when PA is to remain biased on at all times. For non-constant operation, VCC is tied to
VBIAS, and VREF used for turn-on preceding transmit. Table is provided in data sheet for adjusting IREF to desired bias current for
various supply voltage levels (more detailed discussion below).
RF3806 can be used in frequency bands ranging from 1500MHz to 2200MHz. Depending on specific application, the follow-
ing parameters and their trade-offs can be considered: linearity, average output power, signal modulation/peak to average
ratio (PAR), efficiency, dissipated power, junction temperature (Tj), and wear out MTTF. Looking at two distinct examples will
demonstrate how the above mentioned parameters are taken into account. Note that much of the discussed performance can
be found in the data sheet area showing graphs.
First, consider a UMTS pico cell base station transmitter (case 1). Here RF3806 fills the role of final PA, operating from
21dBm-26dBm POUT. VCC can be run from 5V to 8V. Likewise, bias resistance on VREF line can be set to obtain IREF ranging
from 41mA -60mA. The choice of voltage supply and bias is determined by required W-CDMA ACPR spec, desired POUT, and sig-
nal PAR. For instance, consider the following: POUT=26dBm, frequency=2110MHz-2170MHz, signal=W-CDMA test model I
64 DPCH, ACPR requirement over temperature=-45dBc at 5MHz offset. The operating condition here (see data sheet graph
section) would be VCC=8V and IREF=60mA, using impedance match found on UMTS Evaluation Board. For a lower output
power requirement, IREF is kept at 60mA, and VCC reduced to a level below 8V. Sufficient linearity can be obtained at lower
POUT, while the decrease in dissipated power yields a lower junction temperature and enhanced MTTF. For thermal consider-
ations, refer to graphs provided for thermal resistance, junction temperature, and MTTF (these three graphs based on RF3806
thermal scan and process reliability data).
For the second example (case 2), consider a higher power application, where POUT=34dBm and linearity requirement is sub-
stantially reduced from that seen in above example. For this application, we might run IREF=41mA with VCC=8V. RF3806 out-
put load line would be set for maximum efficiency and compression point. The result is a transmit PA which obtains output
power spec, while providing high enough efficiency to keep Tj within desired range. Running IREF=41mA avoids unnecessary
power dissipation, as higher IREF is used only in lower power case for linearity enhancement. A DCS/PCS application schematic
is provided in data sheet for higher power applications, along with corresponding information in section containing graphs.
UMTS evaluation board can be converted to the application schematic, with minor changes to input, output, and interstage
matches (interstage @VCC1 pin). Also, bias resistors at VREF are scaled for lower IREF=41mA. EDGE ACP plots are provided in
the graph section. Note that the matching also covers transmit bands for 1850-1910 CDMA. As a result, this converted appli-
cation board could also be considered for CDMA booster/repeater.
As mentioned above, junction temperature is an important consideration when operating at maximum VCC (8V). The most
demanding scenario, case 1 above, will be considered here as an illustration. In the data sheet graph section, refer to graphs
of Tj vs POUT, RTH vs POUT, and RF3806 wear out MTTF vs Tj. During thermal scan, RF3806 eval board is affixed to a large, tem-
perature controlled stage, held at ambient. The device is etched open, such that thermal image of die can be taken. Reference
temperature is measured at evaluation board to stage interface by thermocouple, placed through a thin groove such that it
makes contact with underside eval board GND plane (directly beneath RF3806). Thermocouple measures "reference tempera-
ture", from which RTH_JREF (junction to reference) is determined. Evaluation board thermal resistance, RTH_BOARD, has been
modeled at 1°C/W. Knowing these two values allows us to calculate junction to case thermal resistance of
RF3806=RTH_JC=RTH_JREF-RTH_BOARD=RTH_JREF-1 (see graph). Thus, RTH_JC is defined as thermal resistance from junction to
GND slug of device.
3-120
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Rev A3 DS070509

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