SIHFP21N60L-E3 查看數據表（PDF） - Vishay Semiconductors
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SIHFP21N60L-E3 Datasheet PDF : 8 Pages
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IRFP21N60L, SiHFP21N60L
Vishay Siliconix
5.0
4.0
ID = 250µA
3.0
2.0
1.0
-75 -50 -25 0
25 50 75 100 125 150
TJ , Temperature ( °C )
Fig. 13 - Threshold Voltage vs. Temperature
800
ID
700
TOP 9.4A
13A
600
BOTTOM 21A
500
400
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature (°C)
Fig. 14a - Maximum Avalanche Energy vs. Drain Current
15 V
VDS
L
Driver
RG
20 V
tp
D.U.T
IAS
0.01 Ω
+
- VDAD A
Fig. 14b - Unclamped Inductive Test Circuit
www.vishay.com
6
VDS
tp
IAS
Fig. 14c - Unclamped Inductive Waveforms
Current regulator
Same type as D.U.T.
12 V
50 kΩ
0.2 µF
0.3 µF
VGS
3 mA
+
D.U.T. - VDS
IG
ID
Current sampling resistors
Fig. 15a - Gate Charge Test Circuit
VGS
QGS
VG
QG
QGD
Charge
Fig. 15b - Basic Gate Charge Waveform
Document Number: 91206
S-81273-Rev. B, 16-Jun-08
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